4.5

A

4.5

- 1 -

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

N 加 P 沟道增强型 MOS 管

N-CH

P-CH

= 48mΩ

Features

特性

Advanced trench process technology

高级的加工技术

High Density Cell Design For Ultra Low On-Resistance

极低的导通电阻高密度的单元设计

Improved Shoot-Through FOM

改良的成形工艺

Package Dimensions

封装尺寸及外形图

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

M

0.10

0.25

B

4.80

5.00

H

0.35

0.49

C

3.80

4.00

L

1.35

1.75

D

0

°

8

°

J

0.375 REF.

E

0.40

0.90

K

45

°

F

0.19

0.25

G

1.27 TYP.

Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)

25

Ratings 等级

Parameter 极限参数

Symbol 符号

N-沟道

P-沟道

Unit 单位

Drain-Source Voltage

漏源电压

60

-60

V

Gate-Source Voltage

栅源电压

±20

±20

V

Continuous Drain Current

连续漏极电流

-3.2

A

Continuous Drain Current

连续漏极电流

3.6

-2.6

A

Pulsed Drain Current

脉冲漏极电流

20

-20

A

Total Power Dissipation

功耗

2.0

W

Linear Derating Factor

线性因子

0.016

W/℃

Operating Junction and Storage Temperature Range

使用及储存温度

Tj, Tstg

-55 ~ +150

℃

4612

HM