HM4612 datasheet(4/5 Pages) HMSEMI

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P-Channel Electrical Characteristics (Tj = 25℃ unless otherwise specified)

P 沟道电气特性

25℃

Parameter 参数

符号

Test Condition 测试条件

最小值

典型值

最大值

单位

Static 静态参数

Drain-Source Breakdown Voltage 漏源击穿电压

BVDSS VGS = 0 V , I D = -250u A

-60

Drain-Source On-State Resistance 漏源导通电阻

RDS(on) VGS = -10 V ,I D= - 3.2 A

110

Drain-Source On-State Resistance 漏源导通电阻

RDS(on) VGS = -4.5 V, I D= - 2.8 A

125

140

Ω

Gate Threshold Voltage

栅源电压

VGS(th) VDS = VGS , I D = - 250 u A

-1

-2.5

-4

Zero Gate Voltage Drain Current 0 栅压漏极电流

IDSS

VDS = -30 V, V GS = 0 V

-1

u A

Gate Body Leakage

漏极短路时截止栅电流

IGSS

VGS = ± 2 0 V, V DS = 0 V

± 100

n A

Forward Transconductance

正向跨导

gfs

VDS = -5 V, I D = -3.2 A

Dynamic3) 动态参数

Total Gate Charge

栅极总电荷

Q g

12.7

Gate-Source Charge

栅-源极电荷

Q gs

2.4

Gate-Drain Charge

栅-漏极电荷

Q gd

V DS =- 30 V, I D = - 3.2 A

VGS = -10 V

2.65

n C

Turn-On Delay Time

导通延迟时间

td(on)

16.5

Turn-On Rise Time

导通上升时间

5.5

Turn-Off Delay Time

关断延迟时间

td(off)

31.5

Turn-Off Fall Time

关断下降时间

V DD = -30 V, R L = 10 Ω

ID = - 3.2 A , VGEN = -10 V

R G = 3 Ω

7.9

Input Capacitance

输入电容

Ciss

737

Output Capacitance

输出电容

Coss

Reverse Transfer Capacitance

反向传输电容

Crss

VDS = - 30 V, V GS = 0 V

f = 1 .0 M H z

p F

Source-Drain Diode 源漏二极管参数

Max. Diode Forward Current 最大正向电流

-2 .3

Diode Forward Voltage

正向电压

V SD

IS = -1.0A , VGS = 0 V

-1 .2

P-Channel

Fig 13. Switching Time Circuit

Fig 14. Switching Time Waveform

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