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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HM3N30PR датащи(PDF) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM3N30PR датащи(HTML) 1 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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1 / 10 page  Silicon N-Channel Power MOSFET General Description： HM3N30PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 300 V Continuous Drain Current 3 A ID Continuous Drain Current TC = 100 °C 2.1 A IDM a1 Pulsed Drain Current 12 A VGS Gate-to-Source Voltage ± 25 V EAS a2 Single Pulse Avalanche Energy 50 mJ EAR a1 Avalanche Energy ,Repetitive 6.4 mJ IAR a1 Avalanche Current 1.2 A dv/dt a3 Peak Diode Recovery dv/dt 5 V/ns Power Dissipation 2.5 W PD Derating Factor above 25°C 0.02 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ VDSS 300 V ID 3 A PD (TC=25℃) 2.5 W RDS(ON)TYP 2.6 Ω HM3N30PR Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com |
Аналогичный номер детали - HM3N30PR |
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Аналогичное описание - HM3N30PR |
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