поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

HM3N30PR датащи(PDF) 5 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

номер детали HM3N30PR
подробное описание детали  Silicon N-Channel Power MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
домашняя страница  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM3N30PR датащи(HTML) 5 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

  HM3N30PR Datasheet HTML 1Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM3N30PR Datasheet HTML 2Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM3N30PR Datasheet HTML 3Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM3N30PR Datasheet HTML 4Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM3N30PR Datasheet HTML 5Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM3N30PR Datasheet HTML 6Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM3N30PR Datasheet HTML 7Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM3N30PR Datasheet HTML 8Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM3N30PR Datasheet HTML 9Page - Shenzhen Huazhimei Semiconductor Co., Ltd Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 10 page
background image
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
-50
0
50
100
150
Tj, Junction temperature , C
Id , Drain Current , Amps
2.5
0
1
2
3
4
3.5
4.5
5.5
6.5
Vgs , Gate to Source Voltage , Volts
4
6
8
10
14
12
3.5
2.5
4.5
5.5
Vgs , Gate to Source Voltage , Volts
3
0
2
4
5
6
2
4
6
5
3
1
1.00E-05
1
10
100
1.00E-04
Pulse Width , Seconds
1.00E-03
1.00E-02
，
t
1.00E-01
1.00E+00
1.00E+01
Figure 6 Maximun Peak Current Capability
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Figure 7 Typical Transfer Characteristics
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
−
=
125
150
25
C
T
I
I
+150℃
+25℃
-55℃
ID=2A
ID=1A
ID=0.5A
ID=0.25A
VGS=10V
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
VDS=30V
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1.5A
Silicon N-Channel Power MOSFET
HM3N30PR
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



Html Pages

1 2 3 4 5 6 7 8 9 10


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com