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GD25VE40CSIG датащи(PDF) 46 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD25VE40CSIG
подробное описание детали  Uniform Sector Dual and Quad Serial Flash
PDF  55 Pages
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25VE40CSIG датащи(HTML) 46 Page - GigaDevice Semiconductor (Beijing) Inc.

Back Button GD25VE40CSIG Datasheet HTML 42Page - GigaDevice Semiconductor (Beijing) Inc. GD25VE40CSIG Datasheet HTML 43Page - GigaDevice Semiconductor (Beijing) Inc. GD25VE40CSIG Datasheet HTML 44Page - GigaDevice Semiconductor (Beijing) Inc. GD25VE40CSIG Datasheet HTML 45Page - GigaDevice Semiconductor (Beijing) Inc. GD25VE40CSIG Datasheet HTML 46Page - GigaDevice Semiconductor (Beijing) Inc. GD25VE40CSIG Datasheet HTML 47Page - GigaDevice Semiconductor (Beijing) Inc. GD25VE40CSIG Datasheet HTML 48Page - GigaDevice Semiconductor (Beijing) Inc. GD25VE40CSIG Datasheet HTML 49Page - GigaDevice Semiconductor (Beijing) Inc. GD25VE40CSIG Datasheet HTML 50Page - GigaDevice Semiconductor (Beijing) Inc. Next Button
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Uniform Sector
Dual and Quad Serial Flash
GD25VE40C
46
Read
tSUS
CS# High To Next Command After Suspend
20
μs
tRST
CS# High To Next Command After Reset (Except from
Erase)
30
μs
tRST_E
CS# High To Next Command After Reset (From Erase)
12
ms
tW
Write Status Register Cycle Time
5
40
ms
tBP1
Byte Program Time (First Byte)
30
50
μs
tBP2
Additional Byte Program Time (After First Byte)
2.5
12
μs
tPP
Page Programming Time
0.7
3.0
ms
tSE
Sector Erase Time (4K Bytes)
50
250/500(1)
ms
tBE1
Block Erase Time (32K Bytes)
0.2
0.5/1.2(2)
s
tBE2
Block Erase Time (64K Bytes)
0.4
0.7/2(3)
s
tCE
Chip Erase Time (GD25VE40C)
3
8
s
Note:
1.
Max Value 4KB tSE with<50K cycles is 250ms and >50K & <100k cycles is 500ms.
2.
Max Value 32KB tBE with<50K cycles is 0.5s and >50K & <100k cycles is1.2s.
3.
Max Value 64KB tBE with<50K cycles is 0.7s and >50K & <100k cycles is 2s.



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