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GD9FS1G8F2AMG датащи(PDF) 12 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD9FS1G8F2AMG датащи(HTML) 12 Page - GigaDevice Semiconductor (Beijing) Inc. |
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12 / 55 page ![]() GD9Fx1GxF2A 12 5.3.2. Host Requirements The host shall not erase or program blocks marked as defective by the manufacturer, and any attempt to do so yields indeterminate results. Figure of “Flow chart to create initial invalid block table” outlines the flow chart how to create an initial invalid block table. It should be performed by the host to create the initial bad block table prior to performing any erase or programming operations on the target. The 1st byte of both main and spare region in non ‐defective blocks are read FFh with ECC enabled on the controller. A defective block is indicated by the majority of bits being read non ‐FFh in the Defective Block Marking location of either the first page or last page of the block. The host shall check the Defective Block Marking location of both the first and last past page of each block to verify the block is valid prior to any erase or program operations on that block. NOTE: Over the lifetime use of a NAND device, the Defective Block Marking of defective blocks may encounter read disturbs that cause bit changes. The initial defect marks by the manufacturer may change value over the lifetime of the device, and are expected to be read by the host and used to create a bad block table during initial use of the part. Start Accessing the 1st block Check FFh at 1st byte of both main and spare data of the first page Check FFh at 1st byte of both main and spare data of the last page Last Block End Yes Update a Bad Block table Yes No No Accessing next block No Figure 8: flow chart to create initial invalid block table sequential figures |
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