Very High Precision, Programmable Linear Hall-Effect Sensor IC

with Reverse Battery Protection and High-Bandwidth (240 kHz)

Analog Output for Core-Based Current Sensing

ACS70310

23

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

EEPROM Error Checking and Correction (ECC)

Hamming code methodology is implemented for EEPROM

checking and correction. The device has ECC enabled after

power-up.

The device always returns 32 bits.

The message received from controller is analyzed by the device

EEPROM driver and ECC bits are added. The first 6 received bits

from device to controller are dedicated to ECC.

Detecting ECC Error

If an uncorrectable error has occurred, bits 27:26 are set to 10,

the VOUT pin will go to a high-impedance state, and the device

will not respond to the applied magnetic field.

EEPROM ECC Errors

Bits

Name

Description

31:28

–

No meaning

27:26

ECC

00 = No Error

01 = Error detected and message corrected

10 = Uncorrectable error

11 = No meaning

25:0

D[25:0]

EEPROM data

Table 2: Customer Memory Map

Address

Register Name

Parameter Name

Description

r/w

Bits

Location

0x4

scratch_c

customer_scratch

Unused area

RW

26

25:0

0x5

cust0_c

sensf

Sensitivity, fine adjustment

RW

9

8:0

qvof

Quiescent Output Voltage (QVO), fine adjustment

RW

9

17:9

sensc

Coarse Sensitivity

2

19:18

0x6

cust1_c

rat_dis

guaranteed if ratiometry is disabled.

RW

1

2

uni_en

Enables Unidirectional Output

RW

1

4

clamp_en

Clamp enable

RW

1

5

pol

Reverses output polarity

RW

1

6

dev_lock

Bit to lock the serial interface from receiving data

RW

1

7

0x29

status_c

customer_access

Customer write access enabled

RO

1

0

[1]

Overtemperature performance is no longer valid if this register is changed from factory default.