Very High Precision, Programmable Linear Hall-Effect Sensor IC

with Reverse Battery Protection and High-Bandwidth (240 kHz)

Analog Output for Core-Based Current Sensing

ACS70310

20

Allegro MicroSystems

955 Perimeter Road

Manchester, NH 03103-3353 U.S.A.

www.allegromicro.com

Parameter

Description

Min.

Max.

System clock period after trimming.

133 ns (7.5 MHz)

167 ns (6 MHz)

Bit time.

1 µs (1 MBd)

1 ms (1 kBd)

Time for the device to drive OUT after Manchester command. Host must stop driving

OUT within this time.

During this time the device is writing the EEPROM

–

–

Device will drive OUT low during this time

The OUT pin is either pulled high or low. No low-to-high transitions are allowed after this

MAX time except to start the next Manchester command.

0

Time before the next Manchester command may be given following a write to EEPROM.

n/a

Time required to hold output low before the 1st Manchester edge.

1 µs

n/a

M Data

VCC or

comm_en

OUT

OUT can be

pulled high or

low

Past this MAX

time OUT

cannot transition

Low to High

except to start

Manchester

OUT is

required to be

low before a

Manchester

command

Earliest time

for Manchester

command

Write to EEPROM

If VCC is held up at the programming voltage,

multiple Manchester commands can be executed.

M Data

Device

drives low

for ACK

EEPROM

write

complete

Host stops

driving OUT

by here

Manchester

command to write

EEPROM