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EMB32N03JS датащи(PDF) 1 Page - Excelliance MOS Corp. |
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EMB32N03JS датащи(HTML) 1 Page - Excelliance MOS Corp. |
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1 / 5 page ![]() 2015/10/19 p.1 EMB32N03JS G D S N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 35mΩ ID 5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±20 V Continuous Drain Current TA = 25 °C ID 5 A TA = 70 °C 3.3 Pulsed Drain Current 1 IDM 20 Power Dissipation TA = 25 °C PD 1.04 W TA = 70 °C 0.66 Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Ambient 3 RJA (T ≤ 10sec) 83 °C / W RJA (Steady State) 120 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 3The device mounted on a 1 in2 pad of 2 oz copper. |
Аналогичный номер детали - EMB32N03JS |
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Аналогичное описание - EMB32N03JS |
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