EMB32N03JS datasheet(2/5 Pages) EXCELLIANCE

номер детали	EMB32N03JS

подробное описание детали	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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производитель	EXCELLIANCE [Excelliance MOS Corp.]

домашняя страница	http://www.excelliancemos.com/

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2 / 5 page

2015/10/19

p.2

EMB32N03JS

ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.0

1.5

3.0

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

A

VDS = 20V, VGS = 0V, TJ = 125 °C

On‐State Drain Current

ID(ON)

VDS = 5V, VGS = 10V

Drain‐Source On‐State Resistance

RDS(ON)

VGS = 10V, ID = 5A

mΩ

VGS = 4.5V, ID = 4A

Forward Transconductance

gfs

VDS = 5V, ID = 5A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 10V, f = 1MHz

323

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

1,2

VDS = 10V, VGS = 10V,

ID = 5A

7.1

Gate‐Source Charge

1,2

Qgs

1.1

Gate‐Drain Charge

1,2

Qgd

2.2

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = 15V,

Turn‐Off Delay Time

1,2

td(off)

ID = 1A, VGS = 10V, RGS = 6Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Pulsed Current

ISM

Forward Voltage

VSD

IF = IS, VGS = 0V

1.2

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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