PIC12F635ESLASHSS datasheet(162/196 Pages) MICROCHIP

162 / 196 page

PIC12F635/PIC16F636/639

DS41232B-page 160

Preliminary

VOH

Output High Voltage

D090

I/O ports

VDD – 0.7

—

IOH = -3.0 mA, VDD = 3.6V (Ind.)

D092

OSC2/CLKOUT (RC mode)

VDD – 0.7

—

IOH = -1.3 mA, VDD = 3.6V (Ind.)

IOH = -1.0 mA, VDD = 3.6V (Ext.)

Digital Output High Voltage

Analog Front-End (AFE) section

D093

LFDATA/SDIO for Analog Front-End

(AFE)

VDD – 0.5

—

IOH = -400

μA, VDD = 2.0V

Capacitive Loading Specs on

Output Pins

D100

COSC2

OSC2 pin

—

15*

In XT, HS and LP modes when

external clock is used to drive OSC1

D101

CIO

All I/O pins

—

50*

D102

IULP

Ultra Low-power Wake-up Current

—200

—

Data EEPROM Memory

D120

Byte Endurance

100K

—

E/W

-40

°C ≤ TA ≤ +85°C

D120A

Byte Endurance

10K

100K

—

E/W

+85°C

≤ TA ≤ +125°C

D121

VDRW

VDD for Read/Write

VMIN

—

5.5

Using EECON1 to read/write

VMIN = Minimum operating voltage

D122

TDEW

Erase/Write cycle time

—

D123

TRETD

Characteristic Retention

—

Year

Provided no other specifications are

violated

D124

TREF

Number of Total Erase/Write Cycles

before Refresh(1)

10M

—

E/W

-40

°C ≤ TA ≤ +85°C

Program Flash Memory

D130

Cell Endurance

10K

100K

—

E/W

-40

°C ≤ TA ≤ +85°C

D130A

Cell Endurance

10K

—

E/W

+85°C

≤ TA ≤ +125°C

D131

VPR

VDD for Read

VMIN

—5.5

VMIN = Minimum operating voltage

D132

VPEW

VDD for Erase/Write

4.5

—

5.5

D133

TPEW

Erase/Write cycle time

—

2.5

D134

TRETD

Characteristic Retention

—

Year

Provided no other specifications are

violated

15.8

DC Characteristics: PIC16F639-I (Industrial), PIC16F639-E (Extended) (Continued)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +85°C for industrial

-40°C

≤ TA ≤ +125°C for extended

Supply Voltage

2.0V

≤ VDD ≤ 3.6V

Param

No.

Sym

Characteristic

Min

Typ†

Max

Units

Conditions

These parameters are characterized but not tested.

†

Data in ‘Typ’ column is at 3.0V, 25

°C unless otherwise stated. These parameters are for design guidance only and are not tested.

Note

In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external clock in RC

mode.

Negative current is defined as current sourced by the pin.

The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating

conditions. Higher leakage current may be measured at different input voltages.

See Section 9.4.1 “Using the Data EEPROM” for additional information

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