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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PIC12F635E/SS датащи(PDF) 160 Page - Microchip Technology |
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PIC12F635E/SS датащи(HTML) 160 Page - Microchip Technology |
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160 / 196 page  PIC12F635/PIC16F636/639 DS41232B-page 158 Preliminary © 2005 Microchip Technology Inc. 15.7 DC Characteristics: PIC16F639-E (Extended) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40 °C ≤ TA ≤ +125°C for extended Supply Voltage 2.0V ≤ VDD ≤ 3.6V Param No. Sym Device Characteristics Min Typ† Max Units Conditions VDD Note D010E IDD Supply Current(1,2) —9 TBD μA2.0 —18 TBD μA3.0 D011E — 110 TBD μA2.0 —190 TBD μA3.0 D012E — 220 TBD μA2.0 —370 TBD μA3.0 D013E — 70 TBD μA2.0 —140 TBD μA3.0 D014E — 180 TBD μA2.0 —320 TBD μA3.0 D015E — TBD TBD μA2.0 —TBD TBD μA3.0 D016E — 340 TBD μA2.0 —500 TBD μA3.0 D017E — 180 TBD μA2.0 —320 TBD μA3.0 D020 IPD Power-down Base Current(4) — 0.99 TBD nA 2.0 WDT, BOD, Comparators, VREF and T1OSC disabled (excludes AFE) — 1.2 TBD nA 3.0 D021 ΔIWDT — 0.3 TBD μA2.0 WDT Current(3) —1.8 TBD μA3.0 D022A ΔIBOD — 58 TBD μA 3.0 BOD Current(3) D022B ΔILVD — TBD TBD μA 2.0 PLVD Current —TBD TBD μA3.0 D023 ΔICMP — 3.3 TBD μA 2.0 Comparator Current(3) —6.1 TBD μA3.0 D024 ΔIVREF —58 TBD μA2.0 CVREF Current(3) —85 TBD μA3.0 D025 ΔIT1OSC — 4.0 TBD μA 2.0 T1OSC Current(3) —4.6 TBD μA3.0 D026 IACT Active Current of AFE only (receiving signal) 1 LC Input Channel Signal 3 LC Input Channel Signals — — 10 — — 16 μA μA 3.6 3.6 CS = VDD; Input = Continuous Wave (CW); Amplitude = 300 mVPP. All channels enabled. D027 ISTDBY Standby Current of AFE only (not receiving signal) 1 LC Input Channel Enabled 2 LC Input Channels Enabled 3 LC Input Channels Enabled — — — 3 4 5 5 6 7 μΑ μA μA 3.6 3.6 3.6 CS = VDD; ALERT = VDD D028 ISLEEP Sleep Current of AFE only — 0.2 1 μA3.6 CS = VDD; ALERT = VDD Legend: TBD = To Be Determined † Data in ‘Typ’ column is at 3.0V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The test conditions for all IDD measurements in Active Operation mode are: OSC1 = external square wave, from rail-to-rail; all I/O pins tri- stated, pulled to VDD; MCLR = VDD; WDT disabled. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current consumption. 3: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption. 4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD. |
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