SM7371EHKP

www.sinopowersemi.com

2

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.1 - July, 2016

®

Symbol

Parameter

Channel 1 Channel 2

Unit

Common Ratings

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

±20

V

Maximum Junction Temperature

150

°C

Storage Temperature Range

-55 to 150

°C

Diode Continuous Forward Current

13.6

34

A

Continuous Drain Current

28

a

40

a

A

23

Maximum Power Dissipation

25

62.5

W

10

25

Thermal Resistance-Junction to Case

Steady State

5

2

°C/W

Continuous Drain Current

8.3

16

A

6.7

13

b

Pulse Drain Current

33

64

A

Maximum Power Dissipation

1.25

1.42

W

0.8

0.9

c

Thermal Resistance-Junction to Ambient

t

£ 10s

48

41

°C/W

Steady State

100

88

d

Avalanche Current, Single pulse

L=0.1mH

20

40

A

d

Avalanche Energy, Single pulse

L=0.1mH

20

80

mJ

Note a：Max. continuous current is limited by bonding wire.

Note b：Pulse width is limited by max. junction temperature.

Note c：Surface mounted on 1in

Note d：UIS tested and pulse width are limited by maximum junction temperature 150