SM7371EHKP

www.sinopowersemi.com

4

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.1 - July, 2016

®

Symbol

Parameter

Test Conditions

Channel 2

Unit

Min.

Typ.

Max.

Static Characteristics

40

-

-

V

Zero Gate Voltage Drain Current

-

-

1

mA

-

-

30

Gate Threshold Voltage

1.4

1.8

2.5

V

Gate Leakage Current

-

-

±100

nA

-

2.5

3

m

W

-

3.5

-

-

3.2

4.2

Gfs

Forward Transconductance

-

26

-

S

Diode Characteristics

e

Diode Forward Voltage

-

0.75

1.1

V

Reverse Recovery Time

-

38.4

-

ns

Charge Time

-

22

-

Discharge Time

-

16.4

-

Reverse Recovery Charge

-

36.2

-

nC

Dynamic Characteristics

f

Gate Resistance

-

0.9

1.8

W

Input Capacitance

Frequency=1.0MHz

-

2650

-

pF

Output Capacitance

-

800

-

Reverse Transfer Capacitance

-

88

-

Turn-on Delay Time

-

16

-

ns

Turn-on Rise Time

-

8

-

Turn-off Delay Time

-

34

-

Turn-off Fall Time

-

36.5

-

Gate Charge Characteristics

f

Total Gate Charge

-

20

-

nC

Total Gate Charge

-

41

-

Threshold Gate Charge

-

4.7

-

Gate-Source Charge

-

7.3

-

Gate-Drain Charge

-

6.1

-

Note e：Pulse test ; pulse width

£300ms, duty cycle£2%.

Note f：Guaranteed by design, not subject to production testing.