SM7371EHKP

www.sinopowersemi.com

3

Copyright ã Sinopower Semiconductor, Inc.

Rev. A.1 - July, 2016

®

Symbol

Parameter

Test Conditions

Channel 1

Unit

Min.

Typ.

Max.

Static Characteristics

Drain-Source Breakdown Voltage

40

-

-

V

Zero Gate Voltage Drain Current

-

-

1

mA

-

-

30

Gate Threshold Voltage

1.4

1.8

2.5

V

Gate Leakage Current

-

-

±10

mA

e

Drain-Source On-state Resistance

-

8.5

10.5

m

W

-

12.6

-

-

12.5

17

Gfs

Forward Transconductance

-

18

-

S

Diode Characteristics

e

Diode Forward Voltage

-

0.8

1.1

V

Reverse Recovery Time

-

18.5

-

ns

Charge Time

-

9

-

Discharge Time

-

9.5

-

Reverse Recovery Charge

-

10.8

-

nC

Dynamic Characteristics

f

Gate Resistance

-

2

4

W

Input Capacitance

Frequency=1.0MHz

-

700

-

pF

Output Capacitance

-

200

-

Reverse Transfer Capacitance

-

30

-

Turn-on Delay Time

-

10

-

ns

Turn-on Rise Time

-

8

-

Turn-off Delay Time

-

17.9

-

Turn-off Fall Time

-

11.3

-

Gate Charge Characteristics

f

Total Gate Charge

-

5.26

-

nC

Total Gate Charge

-

11

-

Threshold Gate Charge

-

1.42

-

Gate-Source Charge

-

2.3

-

Gate-Drain Charge

-

1.3

-

Note e：Pulse test ; pulse width

£300ms, duty cycle£2%.

Note f：Guaranteed by design, not subject to production testing.