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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AM29BDD160G датащи(PDF) 73 Page - Advanced Micro Devices |
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AM29BDD160G датащи(HTML) 73 Page - Advanced Micro Devices |
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73 / 80 page  Am29BDD160G 71 AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Note: 1. Not 100% tested. 2. See the section for more information. Parameter Description All Speed Options Unit JEDEC Std. tAVAV tWC Write Cycle Time (Note 1) Min 65 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 35 ns tEHDX tDH Data Hold Time Min 2 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tWADVS WE# Rising Edge Setup to ADV# Falling Edge Min 5 ns tWP WE# Width Min 15 ns tWADVH WE# Falling Edge After ADV# Falling Edge Min 0 ns tWCKS WE# Rising Edge Setup to CLK Rising Edge Min 5 ns tELEH tCP CE# Pulse Width Min 35 ns tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWsH1 tWHWH1 Programming Operation (Note 2) Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec. |
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