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MBM29PL64LM датащи(PDF) 40 Page - SPANSION

номер детали MBM29PL64LM
подробное описание детали  Flash Memory 64 M (8M X 8/4M X 16) BIT
PDF  69 Pages
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производитель  SPANSION [SPANSION]
домашняя страница  http://www.spansion.com
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MBM29PL64LM датащи(HTML) 40 Page - SPANSION

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MBM29PL64LM90/10
39
• Write (Erase/Program) Operations
(Continued)
Parameter
Symbol
Value
Unit
90
10
JEDEC Standard
Min
Typ
Max
Min
Typ
Max
Write Cycle Time
tAVAV
tWC
90

100

ns
Address Setup Time
tAVWL
tAS
0

0

ns
Address Setup Time to OE Low During
Toggle Bit Polling
—tASO
15

15

ns
Address Hold Time
tWLAX
tAH
45

45

ns
Address Hold Time from CE or OE High
During Toggle Bit Polling
—tAHT
0

0

ns
Data Setup Time
tDVWH
tDS
35

35

ns
Data Hold Time
tWHDX
tDH
0

0

ns
Output Enable Setup Time
—
tOES
0

0

ns
CE High During Toggle Bit Polling
—
tCEPH
20

20

ns
OE High During Toggle Bit Polling
—
tOEPH
20

20

ns
Read Recover Time Before Write
(OE High to WE Low)
tGHWL
tGHWL
0

0

ns
Read Recover Time Before Write
(OE High to CE Low)
tGHEL
tGHEL
0

0

ns
CE Setup Time
tELWL
tCS
0

0

ns
WE Setup Time
tWLEL
tWS
0

0ns
CE Hold Time
tWHEH
tCH
0

0

ns
WE Hold Time
tEHWH
tWH
0

0

ns
CE Pulse Width
tELEH
tCP
35

35

ns
Write Pulse Width
tWLWH
tWP
35

35

ns
CE Pulse Width High
tEHEL
tCPH
25

25

ns
Write Pulse Width High
tWHWL
tWPH
30

30

ns
Effective Page
Programming Time
(Write Buffer Programming)
Per Word
tWHWH1
tWHWH1
23.5

23.5
µs
Programming Time
Word
100

100
µs
Sector Erase Operation *1
tWHWH2
tWHWH2
1.0

1.0
s
VCC Setup Time
—
tVCS
50

50

µs
Recovery Time From RY/BY
—tPB
0

0

ns
Erase/Program Valid to RY/BY Delay
—
tBUSY

90

90
ns
Rise Time to VID *2
—tVIDR
500

500

ns
Rise Time to VACC *3
—tVACCR
500

500

ns
Voltage Transition Time *2
—tVLHT
4

4

µs



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