FUSB303

www.onsemi.com

9

Table 7. DC AND TRANSIENT CHARACTERISTICS

otherwise specified.)

Symbol

Parameter

Unit

Min.

Typ.

Max

TYPE C SPECIFIC PARAMETERS

Source 80

mA CC Current (Default) HOST_CUR1 = 0, HOST_CUR0 = 1 or

via GPIO mode

64

80

96

mA

Source 180

mA CC Current (1.5 A) HOST_CUR1 = 1, HOST_CUR0 = 0 or

via GPIO mode

166

180

194

mA

Source 330

mA CC Current (3 A) HOST_CUR1 = 1, HOST_CUR0 = 1 or via

GPIO mode (Note 3)

304

330

356

mA

Sink Pull−Down Voltage in Dead Battery Under all Pull−up Source Loads

2.18

V

Rd

Sink Pull−Down Resistance when VDD is within Operating Range

4.6

5.1

5.6

k

W

zOPEN

CC Resistance for Disabled State

126

k

W

vRa−SRCdef

Ra Detection Threshold for CC Pin for Source for Default Current on VBUS

(HOST_CUR1/0 = 01) or via GPIO mode

0.15

0.20

0.25

V

vRa−SRC1.5A

Ra Detection Threshold for CC Pin for Source for 1.5 A Current on VBUS

(HOST_CUR1/0 = 10) or via GPIO mode

0.35

0.40

0.45

V

vRa−SRC3A

Ra Detection Threshold for CC Pin for Source for 3 A Current on VBUS

(HOST_CUR1/0 = 11) or via GPIO mode

0.75

0.80

0.85

V

vRd−SRCdef

Rd Detection Threshold for Source for Default Current

(HOST_CUR1/0 = 01) or via GPIO mode

1.50

1.60

1.65

V

vRd−SRC1.5A

Rd Detection Threshold for Source for 1.5 A Current (HOST_CUR1/0 = 10)

or via GPIO mode

1.50

1.60

1.65

V

vRd−SRC3A

Rd Detection Threshold for Source for 3 A Current (HOST_CUR1/0 = 11) or

via GPIO mode (Note 3)

2.45

2.60

2.75

V

vRa−SNK

Ra Detection Threshold for CC Pin for Sink

0.15

0.20

0.25

V

vRd−def

Rd Default Current Detection Threshold for Sink

0.61

0.66

0.70

V

vRd−1.5A

Rd 1.5 A Current Detection Threshold for Sink

1.16

1.23

1.31

V

vRd−3.0A

Rd 3 A Current Detection Threshold for Sink

2.04

2.11

2.18

V

vVBUSthr

VBUS_DET Threshold when VBUSOK is deasserted

2.9

3.3

3.67

V

vVBUSdeb

VBUS_DET debounce time before VBUSOK is deasserted only

(see tDeb below for VBUSOK being asserted)

10

20

ms

vVBthLH

VBUS_DET Threshold when VBUSOK is asserted

3.67

4.07

4.48

V

tDeb

VBUS_DET debounce time before VBUSOK is asserted

250

500

ms

vVSAFEthr

vSafe0V VBUS_DET Threshold

0.8

V

vVSAFEthrhys

VSAFE0V VBUS_DET Threshold hysteresis

50

mV

rVBUSleak

Leakage between VBUS and GND when VBUS not sourced

72.4

k

W

rVBUSdschg

Effective resistance from VBUS and GND when VBUS is being discharged

from vSafe5V

2

k

Ω

rPullup

Pull up resistor to VDD value on EN_N pin

6

M

Ω

vAUTOSNKthr

Weak Battery VDD Threshold

−3%

AUTO

SNK_T

H

+3%

V

Ra

Resistor for discharging VCONN

1

k

Ω

3. VDD = 3 V when 3 A current advertised.