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AFT05MS003N датащи(PDF) 11 Page - NXP Semiconductors

номер детали AFT05MS003N
подробное описание детали  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  20 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT05MS003N датащи(HTML) 11 Page - NXP Semiconductors

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AFT05MS003N
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND
REFERENCE CIRCUIT
350
Gps
f, FREQUENCY (MHz)
Figure 10. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Pin
12
20
1
85
75
65
55
4
3
2
D
19
17
13
410
430
45
VDD =7.5 Vdc
Pin = 20.0 dBm
IDQ =50 mA
Pout
18
16
15
14
450
390
530
370
470
490
510
11
5
0
1
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 11. Output Power versus Gate--Source Voltage
5
1.5
2
2.5
3
4.5
2.5
4
3
f = 435 MHz, VDD =7.5 Vdc
Pin = 20.0 dBm
0
1
Detail A
1.5
1.8
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
3.5
0.2
2.5
1.3
0.4
0.6
1
0.8
4
3.5
1.5
2
0.5
1
0.9
0.7
0.5
0.3
0.1
2
2.3
Pin = 17.0 dBm
f = 435 MHz, VDD =7.5 Vdc
Pin = 20.0 dBm
Pin = 17.0 dBm
Figure 12. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
Pin, INPUT POWER (mW)
13
17
0
220
Gps
0
3
23
25
70
90
20
Pout
VDD =7.5 Vdc
IDQ =50 mA
15
520 MHz
520 MHz
D
435 MHz
27
11
7
50
30
4
2
19
21
435 MHz
1
5
10
435 MHz
350 MHz
350 MHz
9
40
60
80 100 120 140 160 180 200
350 MHz 520 MHz



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