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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AFT05MS003N датащи(PDF) 3 Page - NXP Semiconductors |
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AFT05MS003N датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 20 page  AFT05MS003N 3 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD =7.5 Vdc, IDQ = 100 mA, Pin = 13.95 dBm, f = 520 MHz Common--Source Amplifier Output Power Pout — 3.0 — W Drain Efficiency D — 68.3 — % Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) Signal Type VSWR Pin (dBm) Test Voltage, VDD Result 520 CW > 65:1 at all Phase Angles 21.1 9.0 No Device Degradation Table 6. Ordering Information Device Tape and Reel Information Package AFT05MS003NT1 T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel SOT--89 |
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