AFT05MS003N

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

Designed for handheld two--way radio applications with frequencies from 1.8

to 941 MHz. The high gain, ruggedness and wideband performance of this

device make it ideal for large--signal, common--source amplifier applications in

handheld radio equipment.

Frequency

(MHz)

(dBm)

(dB)

(%)

(W)

17.8

17.1

67.1

3.2

20.0

15.1

73.0

3.2

Frequency

(MHz)

(dB)

(%)

(W)

20.8

68.3

3.0

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal

Type

VSWR

(dBm)

Test

Voltage

Result

CW

> 65:1 at all

Phase Angles

21.1

9.0

No Device

Degradation

1. Measured in 136–174 MHz VHF broadband reference circuit.

2. Measured in 350–520 MHz UHF broadband reference circuit.

3. Measured in 520 MHz narrowband production test circuit.

4. The values shown are the center band performance numbers across the indicated

frequency range.

Features

 Characterized for Operation from 1.8 to 941 MHz

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated ESD Protection

 Integrated Stability Enhancements

 Wideband — Full Power Across the Band

 Exceptional Thermal Performance

 Extreme Ruggedness

Typical Applications

 Output Stage VHF Band Handheld Radio

 Output Stage UHF Band Handheld Radio

 Output Stage for 700–900 MHz Handheld Radio

 Smart Metering

 Driver for 1.8–941 MHz Applications

Document Number: AFT05MS003N

Rev. 0, 8/2015

Freescale Semiconductor

Technical Data

1.8–941 MHz, 3 W, 7.5 V

WIDEBAND

AIRFAST RF POWER

LDMOS TRANSISTOR

AFT05MS003N

SOT--89

Figure 1. Pin Connections

Source

Gate Source Drain

2

23

1

 Freescale Semiconductor, Inc., 2015. All rights reserved.