AFT05MP075NR1 AFT05MP075GNR1

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

Designed for mobile two--way radio applications with frequencies from

136 to 520 MHz. The high gain, ruggedness and broadband performance of

these devices make them ideal for large--signal, common source amplifier

applications in mobile radio equipment.

Frequency

(dB)

(%)

(W)

136 MHz

21.0

68.0

76

14.6

65.8

75

18.5

68.5

70

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test

Voltage

Result

CW

> 65:1 at all

Phase Angles

2

(3 dB Overdrive)

17

No Device

Degradation

1. Measured in 450--520 MHz UHF broadband reference circuit.

2. Measured in 520 MHz narrowband test circuit.

Features

 Characterized for Operation from 136 to 520 MHz

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated ESD Protection

 Integrated Stability Enhancements

 Wideband — Full Power Across the Band

 Exceptional Thermal Performance

 Extreme Ruggedness

 High Linearity for: TETRA, SSB, LTE

 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

Typical Applications

 Output Stage VHF Band Mobile Radio

 Output Stage UHF Band Mobile Radio

Document Number: AFT05MP075N

Rev. 1, 8/2014

Freescale Semiconductor

Technical Data

136–520 MHz, 70 W, 12.5 V

BROADBAND

RF POWER LDMOS TRANSISTORS

AFT05MP075NR1

AFT05MP075GNR1

TO--270WB--4

AFT05MP075NR1

TO--270WBG--4

AFT05MP075GNR1

Figure 1. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistors.

(Top View)

Drain A

Drain B

Gate A

Gate B

 Freescale Semiconductor, Inc., 2013–2014. All rights reserved.