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AFT05MP075N датащи(PDF) 3 Page - NXP Semiconductors

номер детали AFT05MP075N
подробное описание детали  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
PDF  21 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFT05MP075N датащи(HTML) 3 Page - NXP Semiconductors

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AFT05MP075NR1 AFT05MP075GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
2.3
—
pF
Output Capacitance
(VDS = 12.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
64
—
pF
Input Capacitance
(VDS = 12.5 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
148
—
pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 12.5 Vdc, IDQ(A+B) = 400 mA, Pin = 1 W,f= 520 MHz
Common--Source Amplifier Output Power
Pout
—
70
—
W
Drain Efficiency
D
—
68.5
—
%
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ(A+B) = 400 mA
Frequency
(MHz)
Signal
Type
VSWR
Pin
(W)
Test Voltage, VDD
Result
520
CW
> 65:1 at all Phase Angles
2
(3 dB Overdrive)
17
No Device Degradation
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.



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