MMRF1314GS datasheet(8/17 Pages) NXP

8 / 17 page

RF Device Data

NXP Semiconductors

MMRF1314H MMRF1314HS MMRF1314GS

TYPICAL CHARACTERISTICS — 1400 MHz

PRODUCTION TEST FIXTURE

Pout, OUTPUT POWER (WATTS) PEAK

Figure 9. Power Gain and Drain Efficiency

versus Output Power

100

ηD

1000

P3dB

(W)

Pin, INPUT POWER (dBm) PEAK

Figure 10. Output Power versus Input Power

1400

948

1079

(MHz)

P1dB

(W)

VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1400 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

Gps

VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1400 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 11. Power Gain versus Output Power

1000

300 mA

100 mA

500 mA

IDQ(A+B) = 700 mA

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 12. Power Gain versus Output Power

1000

IDQ(A + B) = 100 mA, f = 1400 MHz,

Pulse Width = 128 μsec, Duty Cycle = 10%

50 V

Pin, INPUT POWER (dBm) PEAK

Figure 13. Output Power versus Input Power

200

400

600

800

1000

1200

1400

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 14. Power Gain and Drain Efficiency versus

Output Power

ηD

1000

Gps

35 V

40 V

45 V

VDD =30 V

TC = –40_C

VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1400 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

25_C

85_C

VDD =50 Vdc,IDQ(A+B) = 100 mA, f = 1400 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

TC = –40_C

85_C

25_C

85_C

25_C –40_C

VDD = 50 Vdc, f = 1400 MHz

Pulse Width = 128 μsec, Duty Cycle = 10%

2000

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