MMRF1314GS datasheet(3/17 Pages) NXP

номер детали	MMRF1314GS

подробное описание детали	RF Power LDMOS Transistors

PDF	17 Pages

Scroll/Zoom	100%

производитель	NXP [NXP Semiconductors]

домашняя страница	http://www.nxp.com

Logo

3 / 17 page

MMRF1314H MMRF1314HS MMRF1314GS

RF Device Data

NXP Semiconductors

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1,2) (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ(A+B) = 100 mA, Pout = 1000 W Peak

(100 W Avg.), f = 1400 MHz, 128 μsec Pulse Width, 10% Duty Cycle

Power Gain

Gps

16.0

17.7

19.5

Drain Efficiency

ηD

46.0

52.1

—

Input Return Loss

IRL

—

–18

–9

Load Mismatch/Ruggedness (In NXP Narrowband Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test Voltage, VDD

Result

1400

Pulse

(128 μsec,

10% Duty Cycle)

> 20:1 at all Phase Angles

31.6 Peak

(3 dB Overdrive)

No Device Degradation

Table 5. Ordering Information

Device

Tape and Reel Information

Package

MMRF1314HR5

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel

NI--1230H--4S, Eared

MMRF1314HSR5

NI--1230S--4S, Earless

MMRF1314GSR5

NI--1230GS--4L, Gull Wing

1. Measurement made with device in push--pull configuration.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GS) parts.

MMRF1314GS датащи(PDF) 3 Page - NXP Semiconductors

MMRF1314GS датащи(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

датащи скачать

ссылки URL