MMRF1314GS datasheet(2/17 Pages) NXP

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RF Device Data

NXP Semiconductors

MMRF1314H MMRF1314HS MMRF1314GS

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +105

Vdc

Gate--Source Voltage

VGS

–6.0, +10

Vdc

Storage Temperature Range

Tstg

– 65to+150

°C

Case Operating Temperature Range

–40 to +150

°C

Operating Junction Temperature Range (1)

–40 to +225

°C

Total Device Dissipation @ TC =25°C

Derate above 25°C

909

4.55

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Impedance, Junction to Case

Case Temperature 60°C, 1000 W Peak, 128 μsec Pulse Width,

10% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1400 MHz

ZθJC

0.018

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2500 V

Machine Model (per EIA/JESD22--A115)

B, passes 200 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (4)

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID =10 μAdc)

V(BR)DSS

105

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 105 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

On Characteristics

Gate Threshold Voltage (4)

(VDS =10 Vdc, ID = 520 μAdc)

VGS(th)

1.3

1.8

2.3

Vdc

Gate Quiescent Voltage (5)

(VDD =50 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test)

VGS(Q)

1.6

2.1

2.6

Vdc

Drain--Source On--Voltage (4)

(VGS =10 Vdc, ID =2.6 Adc)

VDS(on)

0.05

0.16

0.35

Vdc

Dynamic Characteristics (4)

Reverse Transfer Capacitance

(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

2.98

—

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.nxp.com/RF/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

4. Each side of device measured separately.

5. Measurement made with device in push--pull configuration.

(continued)

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