BFS17P datasheet(1/11 Pages) INFINEON

номер детали	BFS17P

подробное описание детали	NPN Silicon RF Transistor

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производитель	INFINEON [Infineon Technologies AG]

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BFS17P

NPN Silicon RF Transistor

Features

•

Maximum collector-emitter voltage VCE0 = 15 V

•

Maximum collector current IC = 25 mA

•

Noise figure NF = 3.5 dB

•

3rd order output intercept point OIP3 = 21.5 dBm

•

1 dB output compression point P-1dB = 10 dBm

•

Transition frequency fT = 1.4 GHz

•

Maximum total power dissipation Ptot = 280 mW

•

Package: SOT23

•

Pb-free (RoHS compliant) package

Potential Applications

•

For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA

•

For mixers and oscillators in sub-GHz applications

Device Information

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type / Ordering code

Marking

Pin Configuration

Package

BFS17P / BFS17PE6327HTSA1

MCs

1=B

2=E

3=C

SOT23

Datasheet

Please read the Important Notice and Warnings at the end of this document

Revision 1.1

www.infineon.com

2017-06-01

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