BFS17P datasheet(4/11 Pages) INFINEON

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Electrical Characteristics

Table 3

DC Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

Note or Test Condition

Min.

Typ.

Max.

Collector-emitter breakdown

voltage

V(BR)CEO 15

–

IC = 1 mA, IB = 0

Collector-base cutoff current

ICBO

–

0.05

µA

VCB = 10 V, IE = 0

–

VCB = 25 V, IE = 0

Emitter-base cutoff current

IEBO

–

100

µA

VEB = 2.5 V, IC = 0

DC current gain

hFE

–

150

–

IC = 2 mA, VCE = 1 V

pulse measured

–

IC = 25 mA, VCE = 1 V

pulse measured

Collector-emitter saturation

voltage

VCEsat

–

0.1

0.4

IC = 10 mA, IB = 1 mA

Table 4

AC Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

Note or Test Condition

Min.

Typ.

Max.

Transition frequency

1.4

–

GHz

IC = 2 mA, VCE = 5 V,

f = 200 MHz

1.3

2.5

–

IC = 25 mA, VCE = 5 V,

f = 200 MHz

Collector-base capacitance

Ccb

–

0.55

0.8

VCB = 5 V, f = 1 MHz,

VBE = 0 , emitter grounded

Collector emitter capacitance Cce

–

0.27

VCE = 5 V, f = 1 MHz,

VBE = 0 , base grounded

Emitter-base capacitance

Ceb

–

0.9

1.45

VEB = 0.5 V, f = 1 MHz,

VCB = 0 , collector grounded

Minimum noise figure

NFmin

–

3.5

IC = 2 mA, VCE = 5 V,

ZS = 50Ω, f = 800 MHz

Transducer gain

|S21e|2

–

IC = 20 mA, VCE = 5 V,

ZS = ZL = 50Ω, f = 500 MHz

Third order intercept point at

output

OIP3

–

21.5

–

dBm

VCE = 5 V, IC = 20 mA,

f = 800 MHz, ZS = ZSopt,

ZL = ZLopt

1dB compression point

P-1dB

–

dBm

IC = 20 mA, VCE = 5 V,

ZS = ZL = 50Ω, f = 800 MHz

BFS17P

NPN Silicon RF Transistor

Electrical Characteristics

Datasheet

Revision 1.1

2017-06-01

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