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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BFS17P датащи(PDF) 3 Page - Infineon Technologies AG |
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BFS17P датащи(HTML) 3 Page - Infineon Technologies AG |
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3 / 11 page  1 Maximum Ratings Table 1 Maximum Rating at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Note or Test Condition Collector-emitter voltage VCEO 15 V – Collector-base voltage VCBO 25 – Emitter-base voltage VEBO 2.5 – Collector current IC 25 mA – Peak collector current ICM 50 Total power dissipation 1) Ptot 280 mW TS ≤ 95 °C Junction temperature Tj 150 °C – Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 – 2 Thermal Resistance Table 2 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Junction - soldering point RthJS ≤ 195 K/W – Note: For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 TS is measured on the collector lead at the soldering point to the pcb BFS17P NPN Silicon RF Transistor Maximum Ratings Datasheet 3 Revision 1.1 2017-06-01 |
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