HIP2101IBZ datasheet(4/13 Pages) RENESAS

4 / 13 page

HIP2101

FN9025 Rev 9.00

Page 4 of 13

November 12, 2015

Absolute Maximum Ratings

Thermal Information

Supply Voltage, VDD, VHB-VHS (Notes 3, 4) . . . . . . . . -0.3V to 18V

LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.0V

Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V

Voltage on HO (Note 4) . . . . . . . . . . . . . . . VHS -0.3V to VHB +0.3V

Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V

Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V

Average Current in VDD to HB diode. . . . . . . . . . . . . . . . . . . 100mA

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)

Maximum Recommended Operating Conditions

Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . .+9V to 14.0VDC

Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V

Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V

Voltage on HB . . VHS +8V to VHS +14.0V and VDD -1V to VDD +100V

HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns

Thermal Resistance (Typical)

JA (°C/W) JC (°C/W)

SOIC (Note 5) . . . . . . . . . . . . . . . . . . .

N/A

EPSOIC (Note 6) . . . . . . . . . . . . . . . . .

3.0

QFN (Note 6) . . . . . . . . . . . . . . . . . . . .

6.5

DFN (Note 6) . . . . . . . . . . . . . . . . . . . .

3.0

Max Power Dissipation at 25oC in Free Air (SOIC, Note 5) . . . . 1.3W

Max Power Dissipation at 25oC in Free Air (EPSOIC, Note 6). . 3.1W

Max Power Dissipation at 25oC in Free Air (QFN, Note 6). . . . . 3.3W

Storage Temperature Range . . . . . . . . . . . . . . . . . . . -65°C to 150°C

Junction Temperature Range . . . . . . . . . . . . . . . . . . -55°C to 150°C

Lead Temperature (Soldering 10s - SOIC Lead Tips Only). . 300°C

For Recommended soldering conditions see Tech Brief TB389.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.

NOTES:

3. The HIP2101 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this

mode of operation.

4. All voltages referenced to VSS unless otherwise specified.

JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. JC, the

“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.

Electrical Specifications

VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified

PARAMETERS

SYMBOL

TEST CONDITIONS

TJ = 25°C

TJ = -40°C TO

125°C

UNITS

MIN

TYP

MAX

MIN

MAX

SUPPLY CURRENTS

VDD Quiescent Current

IDD

LI = HI = 0V

0.3

0.45

0.6

VDD Operating Current

IDDO

f = 500kHz

1.7

3.0

3.4

Total HB Quiescent Current

IHB

LI = HI = 0V

0.1

0.15

0.2

Total HB Operating Current

IHBO

f = 500kHz

1.5

2.5

HB to VSS Current, Quiescent

IHBS

VHS = VHB = 114V

0.05

1.5

A

HB to VSS Current, Operating

IHBSO

f = 500kHz

0.7

INPUT PINS

Low Level Input Voltage Threshold

VIL

0.8

1.65

0.8

High Level Input Voltage Threshold

VIH

1.65

2.2

Input Pulldown Resistance

200

100

500



UNDER VOLTAGE PROTECTION

VDD Rising Threshold

VDDR

7.3

7.8

6.5

VDD Threshold Hysteresis

VDDH

0.5

---

HB Rising Threshold

VHBR

6.5

6.9

7.5

HB Threshold Hysteresis

VHBH

0.4

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