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AM3351 датащи(PDF) 80 Page - Texas Instruments |
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AM3351 датащи(HTML) 80 Page - Texas Instruments |
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80 / 252 page ![]() 80 AM3359, AM3358, AM3357, AM3356, AM3354, AM3352, AM3351 SPRS717J – OCTOBER 2011 – REVISED APRIL 2016 www.ti.com Submit Documentation Feedback Product Folder Links: AM3359 AM3358 AM3357 AM3356 AM3354 AM3352 AM3351 Specifications Copyright © 2011–2016, Texas Instruments Incorporated Absolute Maximum Ratings (continued) over junction temperature range (unless otherwise noted)(1)(2) respective I/O supply. It is important the attached peripheral never sources a voltage outside the valid input voltage range, including power supply ramp-up and ramp-down sequences. (9) This terminal is connected to analog circuits in the respective USB PHY. The circuit sources a known current while measuring the voltage to determine if the terminal is connected to VSSA_USB with a resistance less than 10 Ω or greater than 100 kΩ. The terminal should be connected to ground for USB host operation or open-circuit for USB peripheral operation, and should never be connected to any external voltage source. (10) Based on JEDEC JESD78D [IC Latch-Up Test]. (11) For tape and reel the storage temperature range is [–10°C; +50°C] with a maximum relative humidity of 70%. TI recommends returning to ambient room temperature before usage. Fail-safe I/O terminals are designed such they do not have dependencies on the respective I/O power supply voltage. This allows external voltage sources to be connected to these I/O terminals when the respective I/O power supplies are turned off. The USB0_VBUS and USB1_VBUS are the only fail-safe I/O terminals. All other I/O terminals are not fail-safe and the voltage applied to them should be limited to the value defined by the steady state max. Voltage at all I/O pins parameter in Section 5.1. (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 5.2 ESD Ratings VALUE UNIT VESD Electrostatic discharge (ESD) performance: Human Body Model (HBM), per ANSI/ESDA/JEDEC JS001(1) ±2000 V Charged Device Model (CDM), per JESD22-C101(2) ±500 |
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