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LTM8049 датащи(PDF) 4 Page - Linear Technology |
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LTM8049 датащи(HTML) 4 Page - Linear Technology |
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4 / 34 page ![]() LTM4651 4 4651f For more information www.linear.com/LTM4651 The l denotes the specifications which apply over the specified internal operating temperature range (Note 2). TA = 25°C, Test Circuit 1, VIN = 24V and electrically connected to SVIN and RUN, ISETa – SVOUT– = 24V, EXTVCC = PGND, CLKIN open circuit, RfSET = 57.6kΩ and RISET = 480kΩ and voltages referred to PGND unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS IOUT(OCL)– IOUT– Output Current Limit 2.45 A Control Section IISETa Reference Current of ISETa Pin VISETa – SVOUT– = 0.5V, 3.6V ≤ VIN ≤ 28V 0.1V ≤ VISETa – SVOUT– ≤ VIN – SVOUT– ≤ 58V l l 49.3 49 50 50 50.7 51 µA µA IGNDSNS GNDSNS Leakage Current VIN – SVOUT– = SVIN – SVOUT– = RUN – GND = ISETa – SVOUT– = 58V 600 μA tON(MIN) Minimum On-Time (Note 4 ) 60 ns VRUN RUN Turn-On/-Off Thresholds RUN Input Turn-On Threshold, RUN Rising RUN Hysteresis (RUN Thresholds Measured with Respect to GND) l 1.08 1.2 130 1.32 V mV IRUN RUN Leakage Current VIN – 48V, RUN – GND = 3.3V l 0.1 50 nA Oscillator and Phase-Locked Loop (PLL) fOSC Oscillator Frequency Accuracy VIN = 12V, ISETa – SVOUT– = 5V, and: fSET Open Circuit RfSET = 57.6kΩ (See fs Specification) l 360 400 1.95 440 kHz MHz fSYNC PLL Synchronization Capture Range VIN = 12V, ISETa – SVOUT– = 5V, CLKIN Driven with a GND-Referred Clock Toggling from 0.4V to 1.2V and Having a Clock Duty Cycle: From 10% to 90%; fSET Open Circuit From 40% to 60%; RfSET = 57.6kΩ 250 1.3 550 3 kHz MHz VCLKIN CLKIN Input Threshold VCLKIN Rising, with Respect to GND VCLKIN Falling, with Respect to GND 1.2 0.4 V V ICLKIN CLKIN Input Current VCLKIN = 5V with Respect to GND VCLKIN = 0V with Respect to GND –20 230 –5 500 μA μA Power Good Feedback Input and Power Good Output OVPGDFB Output Overvoltage PGOOD Upper Threshold PGDFB Rising, Differential Voltage from PGDFB to SVOUT– l 620 645 675 mV UVPGDFB Output Undervoltage PGOOD Lower Threshold PGDFB Falling, Differential Voltage from PGDFB to SVOUT– l 525 555 580 mV ∆VPGDFB PGOOD Hysteresis PGDFB Returning 8 mV RPGDFB Resistor Between PGDFB and SVOUT– 4.94 4.99 5.04 kΩ RPGOOD PGOOD Pull-Down Resistance VPGOOD = 0.1V with Respect to GND, VPGDFB–SVOUT– < UVPGDFB or VPGDFB – SVOUT– > OVPGDFB 700 1500 Ω IPGOOD(LEAK) PGOOD Leakage Current VPGOOD = 3.3V with Respect to GND, UVPGDFB < VPGDFB – SVOUT– < OVPGDFB 0.1 1 μA tPGOOD(DELAY) PGOOD Delay PGOOD Low to High (Note 4) PGOOD High to Low (Note 4) 16/fSW(HZ) 64/fSW(HZ) s s ELECTRICAL CHARACTERISTICS |
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