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AM29PDL128G80 датащи(PDF) 30 Page - SPANSION

номер детали AM29PDL128G80
подробное описание детали  128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
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AM29PDL128G80 датащи(HTML) 30 Page - SPANSION

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July 29, 2002
Am29PDL128G
29
P R E L I M I NARY
The SecSi Sector area can be protected using one of
the following procedures:
s Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 1, ex-
cept that RESET# may be at either V
IH or VID. This
allows in-system protection of the SecSi Sector Re-
gion without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
s Write the three-cycle Enter SecSi Sector Secure
Region command sequence, and then use the alter-
nate method of sector protection described in the
Sector Protection section.
Once the SecSi Sector is locked and verified, the sys-
tem must write the Exit SecSi Sector Region com-
mand sequence to return to reading and writing the
remainder of the array.
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
SecSi Sector Protection Bit
The SecSi Sector Protection Bit prevents program-
ming of the SecSi Sector memory area. Once set, the
SecSi Sector memory area contents are non-modifi-
able.
Utilizing Password and SecSi Sector Concurrently
The password must be stored in the first eight bytes of
the SecSi Sector. Once the device is permanently
locked into the Password Protection Mode, the erase,
program, and read operation no longer work on those
eight bytes of password in the SecSi Sector. Once the
SecSi Sector protection bit is programmed, no location
in the SecSi Sector may be programmed. To use both
Password Protection and the SecSi Sector concur-
rently, the user must always program the password
into the first eight bytes of the SecSi Sector before ei-
ther the Password Protection Mode is selected or the
SecSi Sector protection bit is programmed.
Method 1
1. Enter the SecSi Sector by issuing the SecSi Sector
Entry command.
2. Program the 64-bit password by issuing the Pass-
word Program and Password Verify commands
3. Lock the password by issuing the Password Protec-
tion Mode Locking Bit Program command.
4. Program the SecSi Sector, excluding bytes 0–7.
5. Lock the SecSi Sector by issuing the SecSi Sector
Protection Bit Program command.
6. Exit the SecSi Sector by issuing the SecSi Sector
Exit or Reset command
Note: Step 4 may be performed prior to step 2.
Method 2
1. Enter the SecSi Sector by issuing the SecSi Sector
Entry command.
2. Program the entire SecSi Sector, including the first
eight bytes contain the 64-bit password.
3. Lock the password by issuing the Password Protec-
tion Mode Locking Bit Program command.
4. Lock the SecSi Sector by issuing the SecSi Sector
Protection Bit Program command.
5. Exit the SecSi Sector by issuing the SecSi Sector
Exit or Reset command
Note: Step 4 may be performed prior to step 3.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes. In addition, the following
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down transitions, or from system
noise.
Low VCC Write Inhibit
When V
CC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until V
CC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when V
CC is
greater than V
LKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to the read mode on power-up.



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