| поискавой системы для электроныых деталей |
|
MB39C014 датащи(PDF) 16 Page - Cypress Semiconductor |
|
|
|||||||||||||||||||||||||||||
MB39C014 датащи(HTML) 16 Page - Cypress Semiconductor |
|
16 / 32 page ![]() Document Number: 002-08361 Rev. *C Page 16 of 32 MB39C014 Furthermore, the continuity loss (PC) is divided roughly into the loss by internal SW FET ON-resistance and by external inductor series resistance. PC = IOUT2 × (RDC + D × RONP + (1 − D) × RONN) D : Switching ON-duty cycle ( = VOUT / VIN) RONP : Internal P-ch SW FET ON resistance RONN : Internal N-ch SW FET ON resistance RDC : External inductor series resistance IOUT : Load current The above formula indicates that it is important to reduce RDC as much as possible to improve efficiency by selecting components. 10.4 Power Dissipation and Heat Considerations The IC is so efficient that no consideration is required in most of the cases. However, if the IC is used at a low power supply voltage, heavy load, high output voltage, or high temperature, it requires further consideration for higher efficiency. The internal loss (P) is roughly obtained from the following formula : P = IOUT2 × (D × RONP + (1 − D) × RONN) D : Switching ON-duty cycle ( = VOUT / VIN) RONP : Internal P-ch SW FET ON resistance RONN : Internal N-ch SW FET ON resistance IOUT : Output current The loss expressed by the above formula is mainly continuity loss. The internal loss includes the switching loss and the control circuit loss as well but they are so small compared to the continuity loss they can be ignored. In this IC with RONP greater than RONN, the larger the on-duty cycle, the greater the loss. When assuming VIN = 3.7 V, Ta = + 70°C for example, RONP = 0.42 Ω and RONN = 0.36 Ω according to the graph “MOS FET ON resistance vs. Operating ambient temperature”. The IC's internal loss P is 144 mW at VOUT = 2.5 V and IOUT = 0.6 A. According to the graph “Power dissipation vs. Operating ambient temperature”, the power dissipation at an operating ambient temperature Ta of + 70°C is 539 mW and the internal loss is smaller than the power dissipation. 10.5 Transient Response Normally, IOUT is suddenly changed while VIN and VOUT are maintained constant, responsiveness including the response time and overshoot/undershoot voltage is checked. As this IC has built-in Error Amp with an optimized design, it shows good transient response characteristics. However, if ringing upon sudden change of the load is high due to the operating conditions, add capacitor C6 (e.g. 0.1 µF). (Since this capacitor C6 changes the start time, check the start waveform as well.) This action is not required for DAC input. R4 C6 R3 VREF VREFIN VREF VREFIN MB39C014 4 7 |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |