AP4P013LEP datasheet(1/6 Pages) A-POWER

номер детали	AP4P013LEP

подробное описание детали	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

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производитель	A-POWER [Advanced Power Electronics Corp.]

домашняя страница	http://www.a-power.com.tw

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AP4P013LEP

Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Low On-resistance

BVDSS

-40V

▼ Simple Drive Requirement

RDS(ON)

14.5mΩ

▼ Fast Switching Characteristic

ID

-50A

▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@Tj=25

oC(unless otherwise specified)

Symbol

Units

VDS

V

VGS

V

ID@TC=25℃

A

ID@TC=100℃

A

IDM

A

PD@TC=25℃

W

PD@TA=25℃

W

EAS

Single Pulse Avalanche Energy

4

mJ

TSTG

℃

TJ

℃

Symbol

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

2.3

℃/W

Rthj-a

62

℃/W

-55 to 150

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current, VGS @ 10V

+20

-50

Pulsed Drain Current

1

-200

-31.2

Total Power Dissipation

2

54.3

45

Halogen-Free Product

Rating

-40

201612231

1

-55 to 150

Maximum Thermal Resistance, Junction-ambient

Thermal Data

Parameter

G

D

S

AP4P013LE series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The TO-220 package is widely preferred for all commercial-

industrial through hole applications. The low thermal resistance and

low package cost contribute to the worldwide popular package.

G

D

S

TO-220(P)

.

Аналогичный номер детали - AP4P013LEP

производитель	номер детали	датащи	подробное описание детали
Advanced Power Electron...	AP4P013LES	72Kb / 6P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Аналогичное описание - AP4P013LEP

производитель	номер детали	датащи	подробное описание детали
GTM CORPORATION	G2U4407	298Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G3J14	377Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G1333	352Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2301	391Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2303	393Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G3401	308Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GI20P02	245Kb / 5P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GI405	253Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GJ9585	236Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GM162	365Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP4P013LEP датащи(PDF) 1 Page - Advanced Power Electronics Corp.

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Аналогичный номер детали - AP4P013LEP

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