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AP4P013LEP датащи(PDF) 3 Page - Advanced Power Electronics Corp.

номер детали AP4P013LEP
подробное описание детали  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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производитель  A-POWER [Advanced Power Electronics Corp.]
домашняя страница  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4P013LEP датащи(HTML) 3 Page - Advanced Power Electronics Corp.

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AP4P013LEP
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
50
100
150
200
024
68
10
-V DS , Drain-to-Source Voltage (V)
T C =25
o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
0
20
40
60
80
100
120
02468
10
-V DS , Drain-to-Source Voltage (V)
T C = 150
o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
8
10
12
14
16
246
8
10
-V GS , Gate-to-Source Voltage (V)
I D = -20 A
T C =25 ℃
0.0
0.4
0.8
1.2
1.6
2.0
2.4
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D = -30 A
V G = - 10V
0.0
0.4
0.8
1.2
1.6
2.0
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D = - 250uA
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
.



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