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AP4P013LEP датащи(PDF) 4 Page - Advanced Power Electronics Corp.

номер детали AP4P013LEP
подробное описание детали  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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производитель  A-POWER [Advanced Power Electronics Corp.]
домашняя страница  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP4P013LEP датащи(HTML) 4 Page - Advanced Power Electronics Corp.

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AP4P013LEP
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
Q
VG
-4.5V
QGS
QGD
QG
Charge
0.1
1
10
100
1000
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
100us
1ms
10ms
DC
T C =25
o C
Single Pulse
0
2
4
6
8
0
1020
30405060
Q G , Total Gate Charge (nC)
I D = -20A
V DS = -32V
0
2000
4000
6000
8000
1
1121
314151
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0
20
40
60
80
012
345
-V GS , Gate-to-Source Voltage (V)
T j =150
o CT
j =25
o C
V DS = -5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this
area limited by
RDS(ON)
.



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