PIP3221-DC datasheet(10/16 Pages) PHILIPS

10 / 16 page

Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

Product data

Rev. 01 — 20 February 2004

10 of 16

9397 750 12361

Dynamic characteristics

[1]

Short circuit response time td(sc) varies with battery-load power PBL according to the logarithmic model equation:

Table 8:

Switching characteristics

Tmb =25 °C; VBG = 13 V; resistive load RL =13 Ω per channel; Figure 12.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Turn-on measured from the input going HIGH

td(on)

turn-on delay time

to 10 % VL

-30

µs

dV/dton

rising slew rate

30 to 70 % VL

0.5

µs

ton

turn-on switching time

to 90 % VL

220

µs

Turn-off measured from the input going LOW

td(off)

turn-off delay time

to 90 % VL

-20

µs

dV/dtoff

falling slew rate

70 to 30 % VL

0.5

µs

toff

turn-off switching time

to 10 % VL

200

µs

Table 9:

Capacitances

Tmb =25 °C; f = 1 MHz; VIG =0V.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Csg

status-ground capacitance

VSG = 5 V

Per channel

Cig

input-ground capacitance

VBG = 13 V

1520pF

Cbl

battery-load capacitance

VBL = 13 V

130

180

Table 10:

Short circuit load protection characteristics

Tmb ≤ 125 °C prior to the overload short circuit condition.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

PBL(OV)(th)

battery-load overload power threshold

5.5

≤ VBG ≤ 35 V; device trips if

PBL >PBL(OV)(th); Figure 11

100

tBL(d)(sc)

battery-load short-circuit characteristic

time

[1]

200

350

800

µs

d(sc)

BL(d)(sc)

BL(OV)(th)

--------------------------





-------------------------------------

≈

Table 11:

Status response times

Limits are valid for

−40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Measured from when the input goes LOW to when the status goes LOW

td(oc)

open-circuit response time

Figure 10 and 14

100

µs

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