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PIP3221-DC датащи(PDF) 6 Page - NXP Semiconductors |
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PIP3221-DC датащи(HTML) 6 Page - NXP Semiconductors |
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6 / 16 page ![]() Philips Semiconductors PIP3221-DC Dual channel high-side TOPFET™ Product data Rev. 01 — 20 February 2004 6 of 16 9397 750 12361 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 8. Static characteristics Table 7: Static characteristics Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Clamping voltage VBG(CL) battery-ground clamping voltage IG = 1 mA 455565V VBL(CL) battery-load clamping voltage IL =IG = 1 mA 50 55 65 V VLG(CL) load-ground clamping voltage IL =10mA; Figure 13 [1] −18 −23 −28 V IL = 4 A; tp = 300 µs −20 −25 −30 V Supply voltage VBG(oper) battery-ground operating voltage 5.5 - 35 V Current [2] IB battery quiescent current VLG =VIG =0V; Figure 9 [3] Tmb = 150 °C --20 µA Tmb =25 °C - 0.1 1 µA IL(off) off-state load current VBL =VBG; per channel Tmb = 150 °C --10 µA Tmb =25 °C - 0.1 1 µA IG(on) operating current one channel on; Figure 5 - 23mA both channels on - 4 6 mA IL(nom) nominal load current (ISO) VBL = 0.5 V; Tmb =85 °C [4] 3.6 - - A Resistance RBLon battery-load on-state resistance 9 ≤ VBG ≤ 35 V; IL =4A; Figure 4 [5] Tmb =25 °C - 73 90 m Ω Tmb = 150 °C - 146 180 m Ω VBG = 5.5 V; IL =4A Tmb =25 °C - 76 120 m Ω Tmb = 150 °C - 150 240 m Ω RG ground resistor IG = −200 mA; tp = 300 µs [6] 40 75 100 Ω Input [7] II input current VIG = 5 V 20 60 160 µA VIG(CL) input-ground clamping voltage II = 200 µA 5.5 7 8.5 V VIG(on) input-ground turn-on voltage Figure 8 - 2.1 3 V VIG(off) input-ground turn-off voltage 1.2 1.8 - V VIG(on)(hys) input-ground turn-on hysteresis 0.15 0.3 0.5 V II(on) input turn-on current VIG =3V - - 100 µA II(off) input turn-off current VIG = 1.2 V 12 - - µA Open current detection [8][9] VLG(oc) load-ground open circuit voltage VBG ≥ 9 V 1.5 2.5 3.5 V IG(oc) open-circuit operating current VBG =VLG =16V open load detected; other channel is off - 0.8 1.5 mA |
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