Philips Semiconductors

PIP3221-DC

Dual channel high-side TOPFET™

Product data

Rev. 01 — 20 February 2004

5 of 16

9397 750 12361

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

6.

Limiting values

[1]

The device will not be harmed by exposure to the maximum supply voltage, but normal operation is not possible because of overvoltage

shutdown - see Table 7 “Static characteristics” for the operating range.

[2]

Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load

must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See Figure 10 “Typical

dynamic response circuit diagram including reverse supply protection and open load detection.”

7.

Thermal characteristics

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

battery-ground supply voltage

[1]

-45

V

load current

4

A

total power dissipation

-

44.6

W

storage temperature

−55

+175

°C

junction temperature

−40

+150

°C

mounting base temperature

during soldering (

≤ 10 s)

-

260

°C

Reverse battery voltage

reverse battery-ground supply voltage

[2]

-16

V

repetitive reverse battery-ground

supply voltage

-32

V

Input current

input current

−5+5

mA

repetitive peak input current

−50

+50

mA

Status current

status current

−5+5

mA

repetitive peak status current

−50

+50

mA

Inductive load clamping

non-repetitive battery-load clamping

energy

-60

mJ

Electrostatic discharge voltage

electrostatic discharge voltage

Human Body Model 1; C = 100 pF;

R = 1.5 k

Ω

-2

kV

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to

mounting base

per channel

-

4

5.6

K/W

both channels

-

2

2.8

K/W

thermal resistance from junction to

ambient

mounted on printed circuit board;

minimum footprint

-

50

-

K/W