LX5512B

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 1

Copyright

© 2004

Rev. 1.0, 2004-06-23

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

TM

®

DESCRIPTION

The LX5512B is a power amplifier

optimized for WLAN applications in

the 2.4-2.5 GHz frequency range.

The PA is implemented as a three-

stage

monolithic

microwave

integrated circuit (MMIC) with active

bias and input/output pre-matching.

The device is manufactured with an

InGaP/GaAs Heterojunction Bipolar

Transistor

(HBT)

IC

process

(MOCVD). It operates at a single

low voltage supply of 3.3V with 32

dB power gain between 2.4-2.5GHz,

at a low quiescent current of 65mA.

For 19dBm OFDM output power

(64QAM, 54Mbps), the PA provides a

low EVM (Error-Vector Magnitude) of

3%, and consumes 140mA total DC

current.

The LX5512B is available in a 16-

pin 3mmx3mm micro-lead package

(MLP). The compact footprint, low

profile, and excellent thermal capability

of LX5512B meets the requirements of

high-gain power amplifiers for IEEE

802.11b/g applications.

IMPORTANT:

KEY FEATUR ES

Advanced InGaP HBT

2.4-2.5GHz Operation

Single-Polarity 3.3V Supply

~65mA

Power Gain ~ 32 dB at

2.45GHz & Pout=19dBm

Total Current ~140mA for

Pout=19dBm at 2.45 GHz

OFDM

EVM ~3 % for 64QAM/ 54Mbps

& Pout=19dBm

Small Footprint: 3x3mm2

Low Profile: 0.9mm

APPLI C ATION S

IEEE 802.11b/g

PRODUCT H I GHLIGHT

PACKAGE ORDER INFO

LQ

Plastic MLPQ

16 pin

LX5512BLQ

Note: Available in Tape & Reel. Append the letters “TR” to the part number.

(i.e. LX5512BLQTR)

This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM)

testing. Appropriate ESD procedures should be observed when handling this device.