LX5512B

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 3

Copyright

© 2004

Rev. 1.0, 2004-06-23

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

TM

®

ELECTRICAL CHA RACTERISTICS

LX5512B

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Frequency Range

f

2.4

2.5

GHz

Gp

32

dB

64QAM / 54Mbps

3.0

%

140

mA

Quiescent Current

65

mA

Bias Control Reference Current

1.8

mA

Small-Signal Gain

S21

32

dB

Gain Flatness

∆S21

Over 100MHz

±0.25

dB

Gain Variation Over Temperature

∆S21

0 to +85°C

±0.25

dB

Input Return Loss

S11

10

dB

Output Return Loss

S22

10

dB

Reverse Isolation

S12

45

dB

Second Harmonic

-40

dBc

Third Harmonic

-40

dBc

11Mbps CCK

215

mA

2

11Mbps CCK

-55

dBc

Ramp-On Time

10 ~ 90%

100

ns

Differential Detector Response

19dBm OFDM

1.4

V

Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.