DESCRIPTION
The LX5512B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a threestage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA.

KEY FEATURES
◾ Advanced InGaP HBT
◾ 2.4-2.5GHz Operation
◾ Single-Polarity 3.3V Supply
◾ Low Quiescent Current ICQ ~65mA
◾ Power Gain ~ 32 dB at 2.45GHz & Pout=19dBm
◾ Total Current ~140mA for Pout=19dBm at 2.45 GHz OFDM
◾ EVM ~3 % for 64QAM/ 54Mbps & Pout=19dBm
◾ Small Footprint: 3x3mm2
◾ Low Profile: 0.9mm

APPLICATIONS
◾ IEEE 802.11b/g