SCT040W120G3-4 pdf, SCT040W120G3-4 подробное описание детали, SCT040W120G3-4 датащи, SCT040W120G3-4 view ::: ALLDATASHEET :::

номер детали	SCT040W120G3-4

подробное описание детали	Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package

объем файла	503.37 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

Аналогичный номер детали - SCT040W120G3-4

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	SCT040W120G3AG	235Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package 30-Nov-2022

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	SCTWA90N65G2V-4	239Kb / 13P	Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package 25-Nov-2020
	SCTW40N120G2V	205Kb / 12P	Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package 09-Jun-2021
	SCTW100N120G2AG	217Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package 23-Jul-2020
	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCTWA40N120G2AG	257Kb / 12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package 22-Nov-2021
	SCTWA60N120G2AG	242Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package 16-Dec-2020
	SCT040H120G3AG	386Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package 14-Oct-2022
	SCT040H65G3AG	389Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package 21-Jan-2022
	SCT10N120AG	238Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package 21-Sep-2022