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Part No.	STH270N4F3-6
Manufacturer	STMICROELECTRONICS
Size	1,023 Kbytes
Pages	19 pages
Description	N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™III Power MOSFET in H2PAK-2 and H2PAK-6 packages

Datasheet Summary with AI

This document is a datasheet for the STMicroelectronics STH270N4F3-2 and STH270N4F3-6 MOSFETs. Here's a summary of the key information:

Device Overview:

️· Type: N-Channel Super Junction MOSFET
️· Applications: Designed for synchronous rectification, DC-DC converters, and other switching applications.
️· Key Features: Low on-resistance (Rds(on)), low gate charge, and high avalanche ruggedness.
️· Packages: Available in both H2PAK-2 and H2PAK-6 packages.

Electrical Characteristics (Key Parameters):

️· Vds (Drain-Source Voltage): 40V
️· Id (Drain Current): 30A (limited by package)
️· Rds(on) (On-Resistance): Very low, typically around 4.9 mΩ (at Vgs = 10V, Id = 15A). This is a primary selling point.
️· Vgs(th) (Gate Threshold Voltage): 2.8V - 4V
️· Qg (Total Gate Charge): Low, contributing to efficient switching.
️· Avalanche Ruggedness: High, for increased reliability in demanding applications.

Other important information in the datasheet:

️· Absolute Maximum Ratings: Lists the limits for voltage, current, power dissipation, and temperature.
️· Thermal Characteristics: Details parameters like thermal resistance for proper heat sinking.
️· Typical Performance Graphs: Provide data showing how the MOSFET behaves under different conditions.
️· Package Dimensions: Detailed mechanical drawings of the H2PAK-2 and H2PAK-6 packages.
️· Tape and Reel Information: Specifications for using the devices in automated assembly.
️· Revision History: Tracks changes made to the document.

In essence, the datasheet provides all the necessary information for engineers to design with these MOSFETs, ensuring proper operation, thermal management, and reliable performance.

Device Overview:

️· Type: N-Channel Super Junction MOSFET
️· Applications: Designed for synchronous rectification, DC-DC converters, and other switching applications.
️· Key Features: Low on-resistance (Rds(on)), low gate charge, and high avalanche ruggedness.
️· Packages: Available in both H2PAK-2 and H2PAK-6 packages.

Electrical Characteristics (Key Parameters):

️· Vds (Drain-Source Voltage): 40V
️· Id (Drain Current): 30A (limited by package)
️· Rds(on) (On-Resistance): Very low, typically around 4.9 mΩ (at Vgs = 10V, Id = 15A). This is a primary selling point.
️· Vgs(th) (Gate Threshold Voltage): 2.8V - 4V
️· Qg (Total Gate Charge): Low, contributing to efficient switching.
️· Avalanche Ruggedness: High, for increased reliability in demanding applications.

Other important information in the datasheet:

️· Absolute Maximum Ratings: Lists the limits for voltage, current, power dissipation, and temperature.
️· Thermal Characteristics: Details parameters like thermal resistance for proper heat sinking.
️· Typical Performance Graphs: Provide data showing how the MOSFET behaves under different conditions.
️· Package Dimensions: Detailed mechanical drawings of the H2PAK-2 and H2PAK-6 packages.
️· Tape and Reel Information: Specifications for using the devices in automated assembly.
️· Revision History: Tracks changes made to the document.

In essence, the datasheet provides all the necessary information for engineers to design with these MOSFETs, ensuring proper operation, thermal management, and reliable performance.