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STUD600S датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STUD600S
подробное описание детали  N-Channel Enhancement Mode Field Effect Transistor
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD600S датащи(HTML) 3 Page - SamHop Microelectronics Corp.

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Parameter
S ymbol
C ondition
Min Typ Max Unit
E LE C TR IC AL C HAR AC TE R IS TIC S (TC=25 C unless otherwise noted)
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
VSD
VGS = 0V, Is = 10A
1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Trans fer C haracteris tics
V G S , G ate-to-S ource Voltage (V )
3
S T U/D600S
-55 C
25 C
20
16
12
8
0
0
0.8
2.4
3.2
4.0
4.8
T j=125 C
0.9
F igure 1. Output C haracteris tics
V DS , Drain-to-S ource Voltage (V )
30
24
18
12
6
0
0
0.5
1
1.5
2
2.5
3
V GS =3.5V
V GS =8V
1.6
V GS =3V
V GS =4.5V
V GS =10V
ID, Drain C urrent (A)
120
100
80
60
40
20
1
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
6
12
18
24
30
1
V GS =10V
V GS =4.5V
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.0
0
25
50
75
T j( C )
150
100
125
T j, J unction T emperature ( C )
V G S =4.5V
ID=4A
V G S =10V
ID=8A
4



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