STUD600S datasheet(1/8 Pages) SAMHOP

номер детали	STUD600S

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	8 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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N-Channel Enhancement Mode Field Effect Transistor

TO-252 and TO-251 Package.

SamHop Microelectronics Corp.

Aug 25,2006

PRODUCT SUMMARY

VDSS

ID

RDS(ON) ( m

Ω ) Max

60V

16A

55 @ VGS = 10V

70 @ VGS = 4.5V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

S

G

D

STU SERIES

TO-252AA(D-PAK)

STD SERIES

TO-251(l-PAK)

G

S

D

STU/D600S

Parameter

Symbol

Unit

Drain-Source Voltage

VDS

V

Gate-Source Voltage

VGS

V

Drain Current-Continuous @Ta

-Pulsed

ID

50

A

W

IDM

Drain-Source Diode Forward Current

IS

Maximum Power Dissipation

PD

Operating Junction and Storage

Temperature Range

TJ, TSTG

-55 to 175

C

a

b

60

15

20

16

30

25 C

70 C

Ta= 25 C

Ta=70 C

35

10.7

A

Limit

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

3

50

R JA

/W

C

/W

C

ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

Green

Product

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