FDMS9409L datasheet(3/8 Pages) ONSEMI

3 / 8 page

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FDMS9409L_F085 Rev. 1.0

Electrical Characteristics T

J = 25°C unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-to-Source Breakdown Voltage

ID = 250μA, VGS = 0V

IDSS

Drain-to-Source Leakage Current

VDS=40V, TJ = 25oC

μA

VGS = 0V

TJ = 175oC (Note 4)

IGSS

Gate-to-Source Leakage Current

VGS = ±20V

±100

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250μA

1.0

1.8

3.0

RDS(on)

Drain to Source On Resistance

ID = 65A, VGS= 4.5V

3.3

4.5

ID = 65A,

VGS= 10V

TJ = 25oC

2.3

2.8

TJ = 175oC (Note 4)

4.0

5.0

Ciss

Input Capacitance

VDS = 20V, VGS = 0V,

f = 1MHz

3360

Coss

Output Capacitance

1080

Crss

Reverse Transfer Capacitance

Gate Resistance

f = 1MHz

2.2

Qg(ToT)

Total Gate Charge

VGS = 0 to 10V

VDD = 32V

ID = 65A

-47

Qg(th)

Threshold Gate Charge

VGS = 0 to 2V

Qgs

Gate-to-Source Gate Charge

-10

Qgd

Gate-to-Drain “Miller“ Charge

Switching Characteristics

Drain-Source Diode Characteristics

Note:

4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

ton

Turn-On Time

VDD = 20V, ID = 65A,

VGS = 10V, RGEN = 6Ω

td(on)

Turn-On Delay

Rise Time

td(off)

Turn-Off Delay

Fall Time

toff

Turn-Off Time

VSD

Source-to-Drain Diode Voltage

ISD =65A, VGS = 0V

1.25

ISD = 32.5A, VGS = 0V

1.2

trr

Reverse-Recovery Time

IF = 65A, dISD/dt = 100A/μs

VDD = 32V

-59

Qrr

Reverse-Recovery Charge

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