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M28R400CT датащи(PDF) 33 Page - STMicroelectronics

номер детали M28R400CT
подробное описание детали  4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
PDF  48 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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M28R400CT датащи(HTML) 33 Page - STMicroelectronics

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M28R400CT, M28R400CB
Table 26. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
1.7V
1Ch
0022h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.2V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2n µs
16µs
20h
0004h
Typical time-out for Double Word Program = 2n µs
16µs
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
000Ch
Typical time-out for full chip erase = 2n ms
4s
23h
0005h
Maximum time-out for word program = 2n times typical
512µs
24h
0005h
Maximum time-out for Double Word Program = 2n times typical
512µs
25h
0003h
Maximum time-out per individual block erase = 2n times typical
8s
26h
0003h
Maximum time-out for chip erase = 2n times typical
32s



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