QPD1025L

1500 W, 65 V, 1.0

– 1.1 GHz, GaN RF Input-Matched Transistor

Datasheet Rev. B

│ Subject to change without notice

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Thermal and Reliability Information

Parameter

Conditions

Values

Units

85 °C Case

Pdiss = 172.8 W

CW

0.26

°C/W

131.3

°C

4.0E10

Hrs

°C

85 °C Case

Pdiss = 345.6 W

CW

0.29

°C/W

188.1

°C

1.0E8

Hrs

°C

85 °C Case

Pdiss = 518.4 W

CW

0.33

°C/W

259.5

°C

4.0E5

Hrs

°C

Notes:

1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability.

Unless otherwise noted, all thermal references are FEA.

2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability.

3. Thermal resistance measured to backside of package.